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| STTH2R02 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 2A 200 V 175 C 0.7 V 15 ns A K A Features and benefits Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature K DO-15 STTH2R02Q A A Description The STTH2R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. K K SMA STTH2R02A SMB STTH2R02U Order codes Part Number STTH2R02Q STTH2R02QRL STTH2R02A STTH2R02U Marking STTH2R02 STTH2R02 R2A R2U October 2006 Rev 2 www.st.com 1/9 Characteristics STTH2R02 1 Table 1. Symbol VRRM IFRM Characteristics Absolute ratings (limiting values at Tj = 25 C, unless otherwise specified) Parameter Repetitive peak reverse voltage DO-15(1) Repetitive peak forward current SMA, SMB DO-15 IF(RMS) RMS forward current SMA, SMB Average forward current, = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature DO-15 Tlead = 90 C 2 75 -65 to + 175 175 A A C C 60 A tp = 5 s, F = 5 kHz Value 200 60 Unit V A IF(AV) IFSM Tstg Tj SMA, SMB Tc = 90 C tp = 10 ms Sinusoidal 1. On infinite heatsink with 10 mm lead length Table 2. Symbol Thermal parameters Parameter Junction to lead Lead Length = 10 mm on infinite heatsink DO-15 SMA, SMB Value 45 C/W Junction to case 30 Unit Rth(j-c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM IF = 6 A 0.89 IF = 2 A 0.76 0.70 Min. Typ Max. 3 A 2 20 1.20 1.0 V 0.85 0.80 Unit VF(2) Forward voltage drop Tj = 25 C Tj = 100 C Tj = 150 C 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.06 IF2(RMS) 2/9 STTH2R02 Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C Min. Typ 23 15 3 40 2.0 Max. 30 ns 20 4 A ns V Unit trr Reverse recovery time IRM tfr VFP Reverse recovery current Forward recovery time Forward recovery voltage IF = 2 A, dIF/dt = -200 A/s, VR = 160 V, Tj = 125 C IF = 2 A, dIF/dt = 100 A/s VFR = 1.1 x VFmax, Tj = 25 C IF = 2 A, dIF/dt = 100 A/s, Tj = 25 C Figure 1. IM(A) Peak current versus duty cycle Figure 2. IFM(A) Forward voltage drop versus forward current (typical values) 100 T IM 50 80 d=tp/T tp 40 60 30 40 P=5W P=2W P=1W 20 Tj=150C 20 10 Tj=25C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.0 0.5 1.0 1.5 2.0 VFM(V) 2.5 Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (SMA) IFM(A) 50 1.0 0.9 Zth(j-a) /Rth(j-a) SMA Scu=1cm 40 0.8 0.7 30 0.6 0.5 20 Tj=150C Tj=25C 0.4 0.3 0.2 10 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 0.1 0.0 Single pulse tP(s) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-02 3/9 Characteristics STTH2R02 Figure 5. Relative variation of thermal Figure 6. impedance junction to case versus pulse duration (SMB) Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Relative variation of thermal impedance junction to case versus pulse duration (DO-15) Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse SMB Scu=1cm DO-15 Lleads=10mm tP(s) 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0.1 0.0 Single pulse tP(s) 0.0 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 7. Junction capacitance versus reverse applied voltage (typical values) F=1MHz Vosc=30mVRMS Tj=25C Figure 8. Reverse recovery charges versus dIF/dt (typical values) C(pF) 100 60 QRR(nC) IF=2A VR=160V 50 40 Tj=125C 10 30 20 Tj=25C 10 VR(V) 1 1 10 100 1000 0 10 100 dIF/dt(A/s) 1000 Figure 9. Reverse recovery time versus dIF/dt Figure 10. Peak reverse recovery current (typical values) versus dIF/dt (typical values) IRM(A) 6 IF=2A VR=160V IF=2A VR=160V tRR(ns) 60 50 5 40 4 30 Tj=125C 3 Tj=125C 20 2 10 Tj=25C 1 Tj=25C dIF/dt(A/s) 0 10 100 1000 0 10 100 dIF/dt(A/s) 1000 4/9 STTH2R02 Ordering information scheme Figure 11. Dynamic parameters versus junction temperature Figure 12. Thermal resistance, junction to ambient, versus copper surface under each lead - SMA/SMB (epoxy FR4, ecu = 35 m) Rth(j-a) (C/W) 120 QRR; IRM [T j] / Q RR; IRM [T j=125C] 1.4 1.2 1.0 IF=2A VR=160V 100 SMA 80 0.8 0.6 QRR IRM SMB 60 40 0.4 0.2 Tj(C) 0.0 25 50 75 100 125 150 20 SCU(cm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 L Figure 13. Thermal resistance, junction to ambient, versus copper surface under each lead DO-15 (epoxy FR4, ecu = 35 m) Rth(j-a) (C/W) 100 DO-15 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 SCU(cm) 2 Ordering information scheme STTH Ultrafast switching diode Average forward current 2=2A 2R 02 XXX Model R Repetitive peak reverse voltage 02 = 200 V Package Q = DO-15 in Ammopack QRL = DO-15 in Tape and reel A = SMA in Tape and reel U = SMB in Tape and reel 5/9 Package information STTH2R02 3 Package information Epoxy meets UL94, V0 Table 5. DO-15 Dimensions DIMENSIONS C A C REF. Millimeters Min. Max. Inches Min. Max. A B D B 6.05 2.95 26 0.71 6.75 3.53 31 0.88 0.238 0.116 1.024 0.028 0.266 0.139 1.220 0.035 C D Table 6. SMA dimensions DIMENSIONS REF. Millimeters Min. A1 A2 b c E E1 D L 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 Figure 14. SMA footprint (dimensions in mm) 1.73 1.48 1.73 1.67 4.94 6/9 STTH2R02 Table 7. E1 Package information SMB dimensions DIMENSIONS REF. Millimeters Min. D Inches Min. Max. Max. 2.15 0.15 A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 2.45 0.075 0.085 0.096 0.20 0.002 0.006 0.008 2.20 0.077 0.41 0.006 0.087 0.016 E A1 A2 L b c E c 5.40 4.30 3.60 1.15 5.60 0.201 0.213 0.220 4.60 0.159 0.169 0.181 3.95 0.130 0.142 0.156 1.60 0.030 0.045 0.063 E1 D L Figure 15. SMB footprint (dimensions in mm) 5.25 2.22 1.75 1.75 1.75 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information STTH2R02 4 Ordering information Part Number STTH2R02Q STTH2R02QRL STTH2R02A STTH2R02U Marking STTH2R02 STTH2R02 R2A R2U Package DO-15 DO-15 SMA SMB Weight 0.4 g 0.4 g 0.068 g 0.12 g Base qty 1000 6000 5000 2500 Delivery mode Ammopack Tape and reel Tape and reel Tape and reel 5 Revision history Date 03-May-2006 13-Oct-2006 Revision 1 2 First issue Maximum Tj set to 175 C for all packages in Table 1. Description of Changes 8/9 STTH2R02 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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